PartNumberChip MaterialEmittingP(nm) GaN/GaNRED625 ParameterSymbolMINTYPMAXUNITTESTCONDITIONForwardVoltageVF2..0/2.2VIf=20mADomiWavelength d625/630nmIf=20mAReverseCurrentIR 10 AVR=5VPowerdissipation Pd 70 mW LuminousIntensity IV500/700mcdIf=20mAAngle ()Angle 120 Dg PeakForwardCurrent If(Peak) 50mA RecommendForwardCurrent If(Rec) 20 mA Electrostatic Discharge ESD 2000 V LifeTime 50000 H